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| 1,550nm Modulator Integrated DFB Laser FEATURES * Modulator Integrated DFB Laser Diode Module * CW operation of DFB laser section * Modulation voltage applied only to modulator section * High speed butterfly package with GPO connection * Built-in optical isolator, monitor photodiode, thermistor, and thermo-electric cooler * Available at C-Band ITU-T grid wavelengths between 1529.55nm thru 1563.05nm FLD5F20NP-E APPLICATION This MI DFB laser is intended for long reach applications (80km) at 10Gb/s. DESCRIPTION The Modulator Integrated DFB Laser (MI DFB Laser) has an electro-absorption modulator monolithically integrated with a conventional Distributed Feed-Back (DFB) laser. The modulation voltage is applied to the modulator section while the laser section operates CW allowing extremely low wavelength chirping. Extinction ratios of more than 10 dB can be achieved with 2.6 Vp-p modulation. The MI laser is installed in a butterfly type package. The module incorporates a highly stable optical coupling system. The module includes an optical isolator, monitor photodiode, thermistor and a thermo-electric cooler. ABSOLUTE MAXIMUM RATINGS (Top=25C, unless otherwise specified) Rating Parameter Storage Temperature Operating Case Temperature Optical Output Power Laser Forward Current Laser Reverse Voltage Modulator Forward Voltage Photodiode Forward Current Photodiode Reverse Voltage TEC Voltage TEC Current Thermistor Temperature Lead Soldering Time Symbol Tstg Top Pf IF VR Vm VDR Vc Ic Tth Condition CW CW CW CW Cooling Heating Cooling Heating ATC Operation 260C Min. -40 -20 -5 -2.5 -0.9 -20 Max. +85 +70 5 150 2 +1 1 10 +2.5 +1.4 +70 10 Unit C C mW mA V V mA V V A C sec Edition 1.3 July 2004 1 FLD5F20NP-E Parameter Peak Wavelength Threshold Current Operating Current Forward Voltage Optical Output Power (Avg. Power) Dispersion Penalty Sidemode Suppression Ratio Wavelength Drift Wavelength Stability with Case Temperature Optical Isolation On Level Modulation Modulator Drive Voltage Extinction Ratio Rise Time Fall Time Cut-off Frequency In-Band Ripple RF Return Loss RF Return Loss Relative Intensity Noise TEC Capacity TEC Current TEC Voltage TEC Power Dissipation Thermal Resistance Thermistor B Constant (Note 3) Symbol p Ith Iop VF Pf dP SSR Is Vo Vmod Rext Tr Tf S21 G S11 S11 RIN T ITEC VTEC PTEC Rth B Note (2) after 20 years Tc=-20 to +70C CW, IF=Iop Note (1) CW, Vm=Vo Test Condition 1,550nm Modulator Integrated DFB Laser Min. 40 -2.0 35 -0.1 25 -0.7 10 -3dB bandwidth, Vm=Vo-0.5|Vmod |, IF=Iop IF=Iop, f=0.1-10GHz, Vm=Vo-0.5|Vmod | f=DC-5GHz, 50 Test Set, Vm=Vo, IF=Iop f=5-10GHz, 50 Test Set, Vm=Vo, IF=Iop 10 8 5 Limits Type Note (4) 1.4 35 20 20 10.0 3,450 30 100 2.0 2 0.1 1.0 0 2.6 25 25 1.0 -120 1.3 2.5 3.3 10.5 3,630 Max. Unit nm mA mA V dBm dB dB nm pm/C dB V V dB ps ps GHz dB dB dB dB/Hz C A V W k K OPTICAL & ELECTRICAL CHARACTERISTICS (TL= Tset, Tc = 25C, BOL, unless otherwise specified) (Vo-Vmod)-3.3V, Rext=10dB IF=Iop, Vm=Vo (at On Level) Vm=Vo-Vmod (at Off Level) IF=Iop,Vm=Vo, 20 to 80% f=10 MHz to 8.5 GHz, Vm=Vo, IF=Iop, 8% Reflection PTEC=3.3W, IF=Iop 70-Tset IF=Iop, T=(70-Tset)[C] IF=Iop, T=(70-Tset)[C] IF=Iop TL=25C , Tc=+25C 9.5 3,270 Note (1) Eudyna Test System 9.95328Gb/s, PRBS=223-1, IF=Iop, Vm=Vo and (Vo-Vmod) Dispersion=1600ps/nm, Dispersion penalty at Bit Error Rate = 1.0E-10 Note (2) Eudyna Test System 23 9.95328Gb/s, PRBS=2 -1, IF=Iop, Vm=Vo and (Vo-Vmod) Note (3) Relation between resistance and temperature (K) is: Rth (T) = Rth (25C)*exp[B(1/T-1/298)] Note (4) Reference Table 1 for Wavelength Table 2 1,550nm Modulator Integrated DFB Laser FLD5F20NP-E Fig. 1 Lasing Spectrum Relative Intensity (10 dB/div.) 10Gb/s PRBS=223-1 IF=Iop Vm=Vo/(Vo-2) Wavelength (Span=1 nm/div, Res.=0.1nm) Fig. 2 Output Power & Monitor Current vs. Forward Current 4 Output Power, Pf (mW) 3 2 Pf 1 0 0 20 40 60 80 Forward Current, IF (mA) 0.3 0 100 1.2 0.9 0.6 Monitor Current (mA) Vo=-0.7V TLD=25C Im 3 FLD5F20NP-E Fig. 3 Extinction Ratio vs. Modulation Applied Voltage 0 1,550nm Modulator Integrated DFB Laser Fig. 4 Cut-off Frequency (S21) Extinction Ratio (dB) -5 Relative Output (dB) 12 9 6 3 0 -3 -6 -9 -12 0 5 10 15 20 -10 -15 -20 0 0.5 1.0 1.5 2.0 2.5 Frequency, f (GHz) Modulation Applied Voltage (V) Fig. 5 RF Return Loss (S11) 0 Fig. 6 Transmission Characteristics 10-4 10-5 TLD=25C, ILD=90mA, Vm=-0.7V/2.0Vpp 9.95328Gb/s, PRBS=223-1, Dispersion penalty @BER=10-10 =+0.7 dB: 1600 ps/nm Back to Back After 1600 ps/nm Return Loss (dB) -10 Bit Error Rate 0 5 10 15 20 10-6 10-7 10-8 10-9 10-10 10-11 10-12 -23 -22 -21 -20 -19 -18 -17 -16 -20 -30 Frequency, f (GHz) Received Optical Power (dBm) 4 1,550nm Modulator Integrated DFB Laser FLD5F20NP-E Table 1 Wavelength Table Wavelength (nm) (TL=Tset) (in vacuum) 1529.55 1530.33 1531.12 1531.90 1532.68 1533.47 1534.25 1535.04 1535.82 1536.61 1537.40 1538.19 1538.98 1539.77 1540.56 1541.35 1542.14 1542.94 1543.73 1544.53 1545.32 1546.12 1546.92 1547.72 1548.51 1549.32 1550.12 1550.92 1551.72 1552.52 1553.33 1554.13 1554.94 1555.75 1556.56 1557.36 1558.17 1558.98 1559.79 1560.61 1561.42 1562.23 1563.05 Part Number FLD5F20NP-E60 FLD5F20NP-E59 FLD5F20NP-E58 FLD5F20NP-E57 FLD5F20NP-E56 FLD5F20NP-E55 FLD5F20NP-E54 FLD5F20NP-E53 FLD5F20NP-E52 FLD5F20NP-E51 FLD5F20NP-E50 FLD5F20NP-E49 FLD5F20NP-E48 FLD5F20NP-E47 FLD5F20NP-E46 FLD5F20NP-E45 FLD5F20NP-E44 FLD5F20NP-E43 FLD5F20NP-E42 FLD5F20NP-E41 FLD5F20NP-E40 FLD5F20NP-E39 FLD5F20NP-E38 FLD5F20NP-E37 FLD5F20NP-E36 FLD5F20NP-E35 FLD5F20NP-E34 FLD5F20NP-E33 FLD5F20NP-E32 FLD5F20NP-E31 FLD5F20NP-E30 FLD5F20NP-E29 FLD5F20NP-E28 FLD5F20NP-E27 FLD5F20NP-E26 FLD5F20NP-E25 FLD5F20NP-E24 FLD5F20NP-E23 FLD5F20NP-E22 FLD5F20NP-E21 FLD5F20NP-E20 FLD5F20NP-E19 FLD5F20NP-E18 Frequency (THz) 196.00 195.90 195.80 195.70 195.60 195.50 195.40 195.30 195.20 195.10 195.00 194.90 194.80 194.70 194.60 194.50 194.40 194.30 194.20 194.10 194.00 193.90 193.80 193.70 193.60 193.50 193.40 193.30 193.20 193.10 193.00 192.90 192.80 192.70 192.60 192.50 192.40 192.30 192.20 192.10 192.00 191.90 191.80 Tolerance (nm) 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 5 FLD5F20NP-E "NP" PACKAGE 2.540.20 PIN 7 17.240.25 15.240.25 7-0.5 PIN 1 o5.20.25 8.890.15 12.70.25 1.25 1,550nm Modulator Integrated DFB Laser UNIT: mm 8.170.25 7-0.150.05 5.410.25 7 o0.90.1 6 TOP VIEW 5 4 3 2 1 8.250.20 4.830.20 TEC TH 10K 50 o4.16 10.00.25 20.830.25 22.000.25 26.040.25 29.970.25 4-o2.670.2 5.080.25 8 # 1 2 3 4 5 6 7 8 PIN DESIGNATIONS Thermistor Thermistor LD Anode Power Monitor Anode Power Monitor Cathode Thermoelectirc Cooler (+) Thermoelectric Cooler (-) Modulator Anode (-) *L 25.00.5 Case Ground: LD Cathode * Pigtail length (L) and connector type are specified in the detail (individual) specification. PIN 8 5.470.2 0.50.2 CONNECTOR For further information please contact: CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com * Do not put this product into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. (c) 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 6 |
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